Micron ships its 232-layer 3D NAND flash with more storage, better performance and a smaller package size

Micron has announced its next-generation 232-layer NAND ahead of next week's Flash Memory Summit in California. The 232-layer NAND includes the industry's fastest NAND I/O speed of 2.4 GB/s and is the world's densest NAND. The flash memory triple layer cell (TLC) density is 14.6 Gb/mm2, which is between 35% and 100% greater than the density of competing TLC products. Micron's new NAND includes the highest layer count, most bits per square millimeter and fastest I/O speed. It builds upon Micron's...